Process gases monitoring for semiconducting manufactures
In semiconductor manufacturing, it is important on the quality and productivity ensure that manages variou process such as CVD, etching and epitaxial growth. infiTOF can be used to monitor reaction products in process gases with high-resolution.
Combustion gas analysis
Carbon monoxide (CO) is produced from the partial combustion of carbon-containing compounds.
A mass spectrometer with high mass resolution is required when CO is analyzed, since nitrogen (N2) and ethylene (C2H4) which have the same nominal mass of m/z 28 as CO, have to be separated.
On-line monitoring of Trimethyl gallium (TMG) reaction with HCl on nitride semiconductor Metal-Organic Vapor Phase Epitaxy (MOVPE)
Nitride semiconductors are candidate materials for high-power transistors. To achieve high breakdown voltage performance, the GaN drift layer must be grown with the lowest amount of impurities(the carbon, silicon, and oxygen impurities in GaN) possible. Metalorganic halide-vapor phase epitaxy (MOHVPE) can effectively reduce carbon incorporation by replacing the carbon-based methyl groups with chlorine using HCl.
Dr. Amano et al of Nagoya University, reported on the impurity concentration in GaN grown by MOHVPE and concluded that chlorine replacement cannot sufficiently reduce the carbon concentration and that the direct reactions must be monitored in the vapor phase.
This application is on-line monitoring measurement of the reaction of HCl and Trimethyl gallium (TMG) in MOVPE using infiTOF by collaborative experiments of Amano Laboratory of Nagoya University and MSI.TOKYO Corporation.